Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction
Cargando...
Compartir
Fecha
Título de la revista
ISSN de la revista
Título del volumen
Editor
Universidad Distrital Francisco Jose de Caldas
Resumen
Descripción
En este trabajo presentamos estudios complementarios de películas delgadas de In(O;OH)S depositadas sobre películas delgadas de AgInS2 para fabricar un sistema capa absorbente/capa buffer utilizado en celdas solares tipo tándem o celdas de juntura simple. Como se demostró en trabajos anteriores realizados por los autores, las capas de AgInS2 crecieron por coevaporación de los metales precursores en un proceso de dos etapas; y las películas delgadas de In(O:OH)S se depositaron por baño químico. Las medidas de rayos X indican que las películas de AgInS2 crecen con estructura tipo calcopirita y las de In(O:OH)S con estructura policristalina. Las películas de AgInS2 presentan conductividad tipo P, y de las medidas de transductancia se encontró un coeficiente de absorción alto (mayor a 104 cm-1), y un gap de 1.95 eV; las películas de In(O:OH)S presentaron un gap de 3.01 eV; el análisis morfológico indica que bajo estas condiciones de síntesis, las películas de In(O:OH)S recubren completamente la capa absorbente de AgInS2 . Finalmente, en este trabajo se aplicó la ecuación de Avrami-Erofeev para estudiar la tasa de crecimiento de las películas delgadas de In(O:OH)S sobre el substrato de AgInS2 . Los resultados indican que el sistema desarrollado puede utilizarse en celdas solares de juntura simple o multijuntura.
In this work, we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/ buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition. X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure. The AgInS2 thin films presented p-type conductivity, and from transductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH)S thin films presented Eg about 3.01 eV; morphological analysis indicated that under this synthesis conditions, In(O,OH) S thin films coated completely the AgInS2 absorber layer. Finally, the Avrami-Erofeev equation was used in this work to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
In this work, we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/ buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition. X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure. The AgInS2 thin films presented p-type conductivity, and from transductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH)S thin films presented Eg about 3.01 eV; morphological analysis indicated that under this synthesis conditions, In(O,OH) S thin films coated completely the AgInS2 absorber layer. Finally, the Avrami-Erofeev equation was used in this work to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
Palabras clave
Ventana óptica, AgInS2; In(O:OH)S, Capa buffer, Capa absorbente, Película delgada, Celdas solares, Absorber layer thin film, AgInS2, Buffer layer, In(O,OH)S, Optic window, Solar cells
Citación
Vallejo, W., Díaz Uribe, C., Arredondo, C., Luna, M., Hernández, J., & Gordillo, G. (2014). Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Revista Tecnura, 18, 30-40