Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
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Institute of Electrical and Electronics Engineers Inc.
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Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region. © 2019 IEEE.
Palabras clave
background impurity, modulation doping, SiGe quantum wells, Binding energy, Nanotechnology, Si-Ge alloys, Background impurities, Energy structures, Impurity binding energy, Modulation doping, Quantum well structures, SiGe quantum wells, THz frequencies, Tunable optical devices, Semiconductor quantum wells