Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center

dc.contributor.affiliationDepartamento de Ciencias Básicas, Universidad de Medellín, Cra. 87 No. 30-65, Medellín, Colombiaspa
dc.contributor.affiliationCentro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexicospa
dc.contributor.affiliationGrupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.authorHoyos J.H.
dc.contributor.authorCorrea J.D.
dc.contributor.authorMora-Ramos M.E.
dc.contributor.authorDuque C.A.
dc.date.accessioned2016-06-23T14:01:37Z
dc.date.available2016-06-23T14:01:37Z
dc.date.issued2016
dc.description.abstractWe calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The electron-donor-impurity spectrum and the associated quantum states are calculated using the effective mass approximation with a parabolic potential energy model describing both the radial and axial electron confinement. We also include the effects of the hydrostatic pressure and external electrostatic fields. The energy spectrum is obtained through an expansion of the eigenstates as a linear combination of Gaussian-type functions which reduces the computational effort since all the matrix elements are obtained analytically. Therefore, the numerical problem is reduced to the direct diagonalization of the Hamiltonian. The obtained energies are used in the evaluation of the dielectric susceptibility and the nonlinear optical absorption coefficient within a modified two-level approach in a rotating wave approximation. This quantity is investigated as a function of the quantum dot dimensions, the impurity position, the external electric field intensity and the hydrostatic pressure. The results of this research could be important in the design and fabrication of zincblende GaN-quantum-dot-based electro-optical devices.eng
dc.identifier.doi10.1016/j.physb.2015.12.038
dc.identifier.issn9214526
dc.identifier.urihttp://hdl.handle.net/11407/2281
dc.language.isoeng
dc.publisherElsevierspa
dc.relation.ispartofPhysica B: Condensed Matter Volume 484, 1 March 2016, Pages 73–82eng
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0921452615303707
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScopusspa
dc.subject.proposalElectric fieldseng
dc.subject.proposalElectromagnetic wave absorptioneng
dc.subject.proposalGallium nitrideeng
dc.subject.proposalHydraulicseng
dc.subject.proposalHydrostatic pressureeng
dc.subject.proposalLight absorptioneng
dc.subject.proposalNanocrystalseng
dc.subject.proposalPoint defectseng
dc.subject.proposalPotential energyeng
dc.subject.proposalQuantum opticseng
dc.subject.proposalQuantum theoryeng
dc.subject.proposalSemiconductor quantum dotseng
dc.subject.proposalSemiconductor quantum wellseng
dc.subject.proposalZinc sulfideeng
dc.subject.proposalCylindrical quantum doteng
dc.subject.proposalDielectric susceptibilityeng
dc.subject.proposalDonor impurity stateeng
dc.subject.proposalEffective mass approximationeng
dc.subject.proposalNonlinear optical absorptioneng
dc.subject.proposalNonlinear optical absorption coefficientseng
dc.subject.proposalNonlinear optical responseeng
dc.subject.proposalRotating wave approximationseng
dc.subject.proposalNonlinear opticseng
dc.titleNonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity centerspa
dc.typeArticle in Press
dc.type.driverinfo:eu-repo/semantics/article

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