Donor-impurity-related second and third harmonic generation and optical absorption in GaAs-(Ga,Al)As 3D coupled quantum dot-rings under applied electric field

dc.contributor.affiliationGrupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationCentro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexicospa
dc.contributor.affiliationDepartamento de Ciencias Básicas, Universidad de Medellín, Medellín, Colombiaspa
dc.contributor.authorDuque C.A.
dc.contributor.authorMora-Ramos M.E.
dc.contributor.authorCorrea J.D.
dc.date.accessioned2016-06-23T14:01:38Z
dc.date.available2016-06-23T14:01:38Z
dc.date.issued2015
dc.description.abstractThe features of some donor-impurity-related nonlinear optical properties in coupled dot-ring nanostructures are investigated with the use of the effective mass and parabolic band approximations. The electron confinement is modeled via a recently reported analytical potential, and the influence of an externally applied static electric field is taken into account. The results show that the increase in the applied field strength causes the blueshift of all the optical responses considered, whereas they can be redshifted or blueshifted depending of the impurity position. For the parameters and interlevel transitions considered in this work, the third harmonic generation is absent when the impurity moves along the same direction of the polarization of the incident resonant radiation.eng
dc.identifier.doi10.1016/j.spmi.2015.07.037
dc.identifier.issn7496036
dc.identifier.urihttps://hdl.handle.net/11407/2284
dc.language.isoeng
dc.publisherAcademic Pressspa
dc.relation.ispartofSuperlattices and Microstructures Volume 87, November 2015, Pages 25–31eng
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0749603615301105
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScopusspa
dc.subject.proposalElectric fieldseng
dc.subject.proposalElectromagnetic wave absorptioneng
dc.subject.proposalGunn oscillatorseng
dc.subject.proposalHarmonic analysiseng
dc.subject.proposalLight absorptioneng
dc.subject.proposalNanocrystalseng
dc.subject.proposalNonlinear opticseng
dc.subject.proposalOptical propertieseng
dc.subject.proposalSemiconductor quantum dotseng
dc.subject.proposalCoupled quantum dotseng
dc.subject.proposalElectron confinementeng
dc.subject.proposalImpurity positionseng
dc.subject.proposalInter-level transitionseng
dc.subject.proposalNon-linear optical propertieseng
dc.subject.proposalResonant radiationeng
dc.subject.proposalSecond and third harmonicseng
dc.subject.proposalStatic electric fieldseng
dc.subject.proposalHarmonic generationeng
dc.titleDonor-impurity-related second and third harmonic generation and optical absorption in GaAs-(Ga,Al)As 3D coupled quantum dot-rings under applied electric fieldspa
dc.typeArticle in Press
dc.type.driverinfo:eu-repo/semantics/article

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