Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

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dc.contributor.affiliationGrupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationDepartment of Physics, Donbass State Engineering Academy, Shkadinova 72, 84313 Kramatorsk, Ukrainespa
dc.contributor.affiliationCentro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexicospa
dc.contributor.affiliationCumhuriyet University, Physics Department, 58140 Sivas, Turkeyspa
dc.contributor.affiliationDepartment of Physics, Dokuz Eylül University, 35160 Buca, Izmir, Turkeyspa
dc.contributor.affiliationUniversidad de Medellín, Carrera 87 No 30-65 Medellín, Colombiaspa
dc.contributor.affiliationCumhuriyet University, Faculty of Technology, Deparment of Optical Engineering, 58140 Sivas, Turkeyspa
dc.contributor.authorTiutiunnyk A.
dc.contributor.authorAkimov V.
dc.contributor.authorTulupenko V.
dc.contributor.authorMora-Ramos M.E.
dc.contributor.authorKasapoglu E.
dc.contributor.authorUngan F.
dc.contributor.authorSökmen I.
dc.contributor.authorMorales A.L.
dc.contributor.authorDuque C.A.
dc.date.accessioned2016-06-23T13:04:59Z
dc.date.available2016-06-23T13:04:59Z
dc.date.issued2016
dc.description.abstractElectronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed. © 2015 Elsevier B.V. All rights reserved.eng
dc.identifier.doi10.1016/j.physb.2015.12.045
dc.identifier.issn9214526
dc.identifier.urihttp://hdl.handle.net/11407/2273
dc.language.isoeng
dc.publisherElsevierspa
dc.relation.ispartofPhysica B: Condensed Matter Volume 484, 1 March 2016, Pages 95–108eng
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0921452615303768
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScopusspa
dc.subject.proposalBinding energyeng
dc.subject.proposalElectric fieldseng
dc.subject.proposalElectronic structureeng
dc.subject.proposalExcitonseng
dc.subject.proposalGallium arsenideeng
dc.subject.proposalNanocrystalseng
dc.subject.proposalNonlinear opticseng
dc.subject.proposalQuantum theoryeng
dc.subject.proposalSemiconducting galliumeng
dc.subject.proposalSemiconductor quantum dotseng
dc.subject.proposalDc electric fieldeng
dc.subject.proposalDonor and acceptoreng
dc.subject.proposalElectronic structure and optical propertieseng
dc.subject.proposalExciton energieseng
dc.subject.proposalExcitonic stateeng
dc.subject.proposalNon-linear optical propertieseng
dc.subject.proposalPhotoluminescence peakeng
dc.subject.proposalShallow impuritieseng
dc.subject.proposalOptical propertieseng
dc.titleElectronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity statesspa
dc.typeArticle in Press
dc.type.driverinfo:eu-repo/semantics/article

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