Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures

Vista sencilla de ítem
dc.contributor.affiliationAkimov V., Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, 050010, Colombia
dc.contributor.affiliationTulupenko V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, 050010, Colombia, Physics department, Donbas State Engineering Academy, Kramatorsk, Ukraine
dc.contributor.affiliationDemediuk R., Physics department, Donbas State Pedagogical University, Sloviansk, Ukraine
dc.contributor.affiliationTiutiunnyk A., Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7D, Arica, Chile
dc.contributor.affiliationDuque C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, 050010, Colombia
dc.contributor.affiliationMorales A.L., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, 050010, Colombia
dc.contributor.affiliationLaroze D., Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile
dc.contributor.affiliationMora-Ramos M.E., Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Cuernavaca, CP 62209, Mexico
dc.contributor.authorAkimov V.; Tulupenko V.; Demediuk R.; Tiutiunnyk A.; Duque C.A.; Morales A.L.; Laroze D.; Mora-Ramos M.E.
dc.date.accessioned2025-04-28T22:10:00Z
dc.date.available2025-04-28T22:10:00Z
dc.date.issued2024
dc.descriptionThe article provides and discusses details of numerical proceeding for the expansion method to calculate energy positions and wave functions of the localized and resonant electronic states emerging in quantum well-type semiconductor nanostructures because of perturbation of confined states by the Coulomb potential of the hydrogenic impurity center. Effective mass approximation is used. Several excited both resonant and non-resonant states are calculated and classified for the case of a simple rectangular GaAs/AlGaAs quantum well. Results are compared to the ones in literature. © The Author(s) 2024.
dc.identifier.doi10.1038/s41598-024-81346-6
dc.identifier.instnameinstname:Universidad de Medellínspa
dc.identifier.issn20452322
dc.identifier.reponamereponame:Repositorio Institucional Universidad de Medellínspa
dc.identifier.repourlrepourl:https://repository.udem.edu.co/
dc.identifier.urihttp://hdl.handle.net/11407/8866
dc.language.isoeng
dc.publisher.facultyFacultad de Ciencias Básicasspa
dc.relation.citationissue1
dc.relation.citationvolume14
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85213525021&doi=10.1038%2fs41598-024-81346-6&partnerID=40&md5=d9155ba555ec8a5646946b2cca669ae7
dc.relation.referencesChaves A., Et al., Bandgap engineering of two-dimensional semiconductor materials, npj 2D Mater. Appl, 4, (2020)
dc.relation.referencesXu H., Akbari M.K., Zhuiykov S., 2D Semiconductor nanomaterials and heterostructures: controlled synthesis and functional applications, Nanoscale Res. Lett, 16, (2021)
dc.relation.referencesHolmberg V.C., Helps J.R., Mkhoyan K.A., Norris J.D., Imaging impurities in Semiconductor nanostructures, Chem. Mater, 25, pp. 1332-1350, (2013)
dc.relation.referencesTulupenko V., Et al., On the possibility of tuning the energy separation between space-quantized levels in a quantum well, Phil Mag Lett, 93, pp. 42-49, (2012)
dc.relation.referencesDuque C.A., Et al., About possible THz modulator on the base of delta-doped QWs, Superlattice Microst, 87, pp. 5-11, (2015)
dc.relation.referencesTulupenko V., Et al., Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type delta-doped QW, Phys. Stat. Sol (b), 254, 4, (2016)
dc.relation.referencesAkimov V., Et al., Background impurities and a delta-doped QW. Part II: Edge doping, Semicond. Sci. Technol, 36, (2021)
dc.relation.referencesBastard G., Hydrogenic impurity states in a quantum well: a simple model, Phys. Rev. B, 24, (1981)
dc.relation.referencesGreene R.L., Bajaj K.K., Energy levels of hydrogenic impurity states in GaAs-Ga1 – xAlxAs quantum well structures, Solid State Commun, 45, pp. 825-829, (1983)
dc.relation.referencesLiu W., Quinn J.J., Shallow-impurity states in semiconductor quantum-well structures, Phys. Rev. B, 31, (1985)
dc.relation.referencesWeber G., Schulz P.A., Oliveira L.E., Density of states and energy spectra of hydrogenic impurities in quantum-well wires, Phys. Rev. B, 38, (1988)
dc.relation.referencesCakir R., Yildirim H., Binding energies of shallow donors in polar ZnO/ZnBeO quantum well, Solid State Commun, 379, (2024)
dc.relation.referencesLiu X., Et al., Thermodynamic property of one-dimensional hydrogenic impurity in Nitride semiconductor quantum well, Philos. Mag, 103, pp. 2179-2205, (2023)
dc.relation.referencesVinter B., Influence of charged impurities on Si inversion-layer electrons, Phys. Rev. B, 26, (1982)
dc.relation.referencesStopa M., DasSarma S., Calculated shallow-donor-level binding energies in GaAs-AlxGa1 – xAs quantum wells, Phys. Rev. B, 40, pp. 8466-8462, (1988)
dc.relation.referencesBlom A., Odnoblyudov M.A., Yassievich I.N., Chao K.A., Donor states in modulation-doped Si/SiGe heterostructures, Phys. Rev. B, 68, (2003)
dc.relation.referencesFano U., Effects of Configuration Interaction on intensities and Phase shifts, Phys. Rev, 124, (1961)
dc.relation.referencesBenDaniel D.J., Duke C.B., Space-Charge effects on Electron Tunneling, Phys. Rev, 152, (1966)
dc.relation.referencesTan I.H., Snider G.L., Hu E.L., A self-consistent solution of Schrödinger-Poisson equations using a nonuniform mesh, J. Appl. Phys, 68, (1990)
dc.relation.referencesAbramov A., Resonant donor states in quantum well, Mod. Phys. Lett. B, 25, 2, pp. 89-96, (2011)
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScientific Reports
dc.sourceSci. Rep.
dc.sourceScopus
dc.subjectExpansion method
dc.subjectHydrogenic impurity states
dc.subjectSemiconductor heterostructures
dc.subjectNanomaterial
dc.subjectArticle
dc.subjectSemiconductor
dc.subjectExpansion method
dc.subjectHydrogenic impurity states
dc.subjectSemiconductor heterostructures
dc.titleNumerical proceeding to calculate impurity states in 2D semiconductor heterostructures
dc.typeArticle
dc.type.localArtículo revisado por paresspa
dc.type.versioninfo:eu-repo/semantics/publishedVersion

Archivos

Colecciones

Indexados Scopus