Background impurities and a delta-doped QW. Part I: Center doping
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Institute of Physics Publishing
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The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions. © 2019 IOP Publishing Ltd.
Palabras clave
impurity binding energy, modulation doping, self-consistent calculation, semiconductor quantum wells, Binding energy, Semiconductor doping, Silicon, Background impurities, Energy characteristics, Impurity binding energy, Intersubband optical transitions, Modulation doping, Quantum well structures, Self-consistent calculation, Self-consistent method, Semiconductor quantum wells