Temperature shift of intraband absorption peak in tunnel-coupled QW structure

dc.contributor.affiliationAkimov, V., Grupo MATBIOM, Departamento de Ciencias Basicas, Universidad de Medellín, Carrera 87 No 30-65, Medellín, Colombiaspa
dc.contributor.affiliationFirsov, D.A., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationTulupenko, V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombiaspa
dc.contributor.affiliationBalagula, R.M., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationVinnichenko, M.Y., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.affiliationVorobjev, L.E., Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russian Federationspa
dc.contributor.authorAkimov V.
dc.contributor.authorFirsov D.A.
dc.contributor.authorDuque C.A.
dc.contributor.authorTulupenko V.
dc.contributor.authorBalagula R.M.
dc.contributor.authorVinnichenko M.Y.
dc.contributor.authorVorobjev L.E.
dc.date.accessioned2017-05-12T16:05:57Z
dc.date.available2017-05-12T16:05:57Z
dc.date.issued2017
dc.description.abstractAn experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift. © 2017 Elsevier B.V.eng
dc.identifier.doi10.1016/j.optmat.2017.01.050
dc.identifier.issn9253467
dc.identifier.urihttp://hdl.handle.net/11407/3150
dc.language.isoeng
dc.publisherElsevier B.V.spa
dc.relation.ispartofOptical Materialsspa
dc.relation.isversionofhttp://www.sciencedirect.com/science/article/pii/S0925346717300654
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScopusspa
dc.subjectDouble quantum wellsspa
dc.subjectSelf-consistent calculationsspa
dc.subjectSemiconductor nanostructuresspa
dc.subject.proposalElectromagnetic wave absorptioneng
dc.subject.proposalLight absorptioneng
dc.subject.proposalTemperature distributioneng
dc.subject.proposalAbsorption co-efficienteng
dc.subject.proposalDouble quantum welleng
dc.subject.proposalIntersubband absorptioneng
dc.subject.proposalIntraband absorptionseng
dc.subject.proposalNumerical calculationeng
dc.subject.proposalSelf-consistent calculationeng
dc.subject.proposalSemiconductor nanostructureseng
dc.subject.proposalTemperature dependenceeng
dc.subject.proposalSemiconductor quantum wellseng
dc.titleTemperature shift of intraband absorption peak in tunnel-coupled QW structurespa
dc.typeArticle
dc.type.driverinfo:eu-repo/semantics/article

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