Background impurities in a delta-doped QW. Part II: Edge doping

Vista sencilla de ítem
dc.contributor.affiliationAkimov, V., Departamento de Ciencias Básicas, Universidad de Medellín, Carrera 87 No. 30-65, Medellín, Colombia, Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.affiliationTulupenko, V., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.affiliationDuque, C.A., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia, Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.affiliationMorales, A.L., Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
dc.contributor.affiliationDemediuk, R., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.affiliationTiutiunnyk, A., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile
dc.contributor.affiliationLaroze, D., Instituto de Alta Investigación, Cedenna, Universidad de Tarapacá, casilla 7D, Arica, Chile
dc.contributor.affiliationKovalov, V., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.affiliationSushchenko, D., Donbass State Engineering Academy, Kramatorsk, 84313, Ukraine
dc.contributor.authorAkimov V
dc.contributor.authorTulupenko V
dc.contributor.authorDuque C.A
dc.contributor.authorMorales A.L
dc.contributor.authorDemediuk R
dc.contributor.authorTiutiunnyk A
dc.contributor.authorLaroze D
dc.contributor.authorKovalov V
dc.contributor.authorSushchenko D.
dc.date.accessioned2022-09-14T14:33:29Z
dc.date.available2022-09-14T14:33:29Z
dc.date.issued2021
dc.descriptionThis is the second part of our study of the background impurity influence on the intersubband energy structure of a single SiGe/Si/SiGe quantum well with the impurity delta layer within the well. By the background impurity we mean sparse shallow donor doping throughout the infinitely wide barriers. In this part we consider a situation where the delta layer is positioned near the edge of the well and the structure symmetry is broken. We explain in detail the necessary modifications of our self-consistent method that includes calculation of impurity binding energy. The results particularly show that the mentioned asymmetry combined with the background impurity in the barriers provides new features to the effect of tuning the intersubband optical transitions by the ionization grade of the impurity in delta-layer that provides new technological possibilities. © 2021 IOP Publishing Ltd.eng
dc.identifier.doi10.1088/1361-6641/abe65b
dc.identifier.instnameinstname:Universidad de Medellínspa
dc.identifier.issn2681242
dc.identifier.reponamereponame:Repositorio Institucional Universidad de Medellínspa
dc.identifier.repourlrepourl:https://repository.udem.edu.co/
dc.identifier.urihttp://hdl.handle.net/11407/7396
dc.language.isoeng
dc.publisherIOP Publishing Ltdspa
dc.publisher.facultyFacultad de Ciencias Básicasspa
dc.publisher.programCiencias Básicasspa
dc.relation.citationissue4
dc.relation.citationvolume36
dc.relation.isversionofhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85102119666&doi=10.1088%2f1361-6641%2fabe65b&partnerID=40&md5=e647ab83472b6d9f25ce09b7c5d36829
dc.relation.referencesAkimov, V, Tulupenko, V, Duque, C A, Morales, A L, Demediuk, R, Tiutiunnyk, A, Laroze, D, Sushchenko, D, (2019) Semicond. Sci. Technol, 34, p. 125009
dc.relation.referencesTulupenko, V, Abramov, A, Belichenko, Y, Akimov, V, Bogdanova, T, Poroshin, V, Fomina, O, (2011) J. Appl. Phys, 109, p. 064303
dc.relation.referencesTulupenko, V, Duque, C A, Demedyuk, R, Belichenko, Y, Duque, C M, Akimov, V, Poroshin, V, Fomina, O, (2013) Phil. Mag. Lett, 93, p. 42
dc.relation.referencesTulupenko, V, (2015) Physica E, 66, p. 162169
dc.relation.referencesBenDaniel, D J, Duke, C B, (1966) Phys. Rev, 152, p. 683
dc.relation.referencesVinter, B, (1982) Phys. Rev. B, 26, p. 6808
dc.relation.referencesBastard, G, (1981) Phys. Rev. B, 24, p. 4714
dc.relation.referencesBastard, G, (1991) Wave Mechanics Applied to Semiconductor Nanostructures, 1. , (New York: Wiley-Interscience)
dc.relation.referencesRam, J, Dhariwal, S R, (2006) Phil. Mag, 84, p. 5825
dc.relation.referencesNieto, M M, Gutschick, V P, Bender, C M, Cooper, F, Strottman, D, (1985) Phys. Lett, 163B, p. 336
dc.relation.referencesLeo, K, Shaht, J, Gobel, E O, Gordon, J P, Schmitt-Rink, S, (1992) Semicond. Sci. Technol, 7, p. B394
dc.relation.referencesLyo, S K, (1994) Phys. Rev. B, 50, p. 4965
dc.relation.referencesFerreira, R, Bastard, G, (1997) Rep. Prog. Phys, 60, p. 345
dc.relation.referencesCordes, J G, Das, A K, (2001) Superlattices Microstruct, 29, p. 121
dc.relation.referencesSong, D Y, (2008) Ann. Phys., N Y, 323, p. 2991
dc.relation.referencesDovzhenko, Y, Stehlik, J, Petersson, K D, Petta, J R, Lu, H, Gossard, A C, (2011) Phys. Rev. B, 84, p. 161302
dc.relation.referencesSun, D, Zhang, H, Sun, H, Li, X, Li, H, (2018) Laser Phys. Lett, 15, p. 045208
dc.relation.referencesTanimu, A, Muljarov, E A, (2018) J. Phys. Commun, 2, p. 115008
dc.relation.referencesZhang, Y, Sun, J, Gao, J, (2017) Opt. Express, 25, p. 30032
dc.relation.referencesFrigerio, J, Ballabio, A, Ortolani, M, Virgilio, M, (2018) Opt. Express, 26, p. 31861
dc.relation.referencesPersichetti, L, (2020) Crystals, 10, p. 179
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceSemiconductor Science and Technology
dc.subject.proposalImpurity binding energyeng
dc.subject.proposalModulation dopingeng
dc.subject.proposalQuantum welleng
dc.subject.proposalSelf-consistent methodeng
dc.subject.proposalBinding energyeng
dc.subject.proposalSiliconeng
dc.subject.proposalBackground impuritieseng
dc.subject.proposalDelta layerseng
dc.subject.proposalImpurity binding energyeng
dc.subject.proposalIntersubband energyeng
dc.subject.proposalIntersubband optical transitionseng
dc.subject.proposalSelf-consistent methodeng
dc.subject.proposalShallow donorseng
dc.subject.proposalStructure symmetryeng
dc.subject.proposalSemiconductor quantum wellseng
dc.titleBackground impurities in a delta-doped QW. Part II: Edge doping
dc.typeArticle
dc.type.coarhttp://purl.org/coar/resource_type/c_6501
dc.type.driverinfo:eu-repo/semantics/article
dc.type.localArtículospa
dc.type.versioninfo:eu-repo/semantics/publishedVersion

Archivos

Colecciones

Indexados Scopus