Hydrostatic pressure effects on the donor impurity‐related photoionization cross‐section in cylindrical‐shaped GaAs/GaAlAs quantum well wires

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dc.contributor.affiliationInstituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombiaspa
dc.contributor.affiliationDepto. de Ciencia Básica, Universidad de Medellín, AA 1983, Medellín, Colombiaspa
dc.contributor.affiliationDepartamento de Física, Universidad del Valle, AA 25360, Cali, Colombiaspa
dc.contributor.authorCorrea J.D.
dc.contributor.authorCepeda-Giraldo O.
dc.contributor.authorPorras-Montenegro N.
dc.contributor.authorDuque C.A.
dc.date.accessioned2015-10-09T13:17:52Z
dc.date.available2015-10-09T13:17:52Z
dc.date.issued2004
dc.descriptionUsing a variational method the binding energy has been calculated for a shallow donor impurity and the donor‐related photoionization cross‐section in 1D and 0D GaAs low‐dimensional systems. The dependence on the binding energy and the photoionization cross‐section for a hydrogenic donor impurity in the finite potential model are discussed and the results are presented as a function of the radius, polarization of the photon, applied hydrostatic pressure, and photon energy. The calculations for the pressure effects are performed both in the direct and indirect GaAs gap regime. Calculations are presented for an on‐axis (on‐center) impurity in the wire (in the dot). (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)eng
dc.identifier.doi10.1002/pssb.200405225
dc.identifier.urihttp://hdl.handle.net/11407/1367
dc.language.isoeng
dc.relation.ispartofPhysica Status Solidi (B) Basic Research, marzo de 2005, volume 241, issue 14, pp 3311-3317eng
dc.relation.isversionofhttp://onlinelibrary.wiley.com/doi/10.1002/pssb.200405225/abstract
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceScopusspa
dc.subject.proposalUsing a variational method the binding energy has been calculated for a shallow donor impurity and the donor-related photoionization cross-section in 1D and 0D GaAs low-dimensional systems. The dependence on the binding energy and the photoionization cross-section for a hydrogenic donor impurity in the finite potential model are discussed and the results are presented as a function of the radius, polarization of the photon, applied hydrostatic pressure, and photon energy. The calculations for the pressure effects are performed both in the direct and indirect GaAs gap regime. Calculations are presented for an on-axis (on-center) impurity in the wire (in the dot). © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.eng
dc.titleHydrostatic pressure effects on the donor impurity‐related photoionization cross‐section in cylindrical‐shaped GaAs/GaAlAs quantum well wireseng
dc.typeconferenceObject
dc.type.driverinfo:eu-repo/semantics/conferenceObject

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